• Title of article

    Application of VEE Pro Software for Measurement of MOS Device Parameters using C-V curve

  • Author/Authors

    Viranjay M. Srivastava، نويسنده , , G.Singh، نويسنده , , K.S.Yadav، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2010
  • Pages
    4
  • From page
    43
  • To page
    46
  • Abstract
    For a capacitor formed of MOS device using Metal-silicon dioxide-silicon (MOS) layers with an oxide thickness of 528 A (measured optically), some of the material parameters were found from the curve drawn between Capacitance vs Voltage (C-V) through the Visual Engineering Environment Programming (VEE Pro) software. To perform the measurment, process by a distance, from the hazardous room, we use VEE Pro software. In this research, to find good result, vary the voltage with smaller increments and perform the measurements by vary the applying voltage from +7V to -7V and then back to +7V again and then save this result in a Data sheet with respect to temperature, volage and frequency using this program.
  • Keywords
    VLSI , Capacitance-voltage curves , LCR meter , VEE Pro , MOS device
  • Journal title
    International Journal of Computer Applications
  • Serial Year
    2010
  • Journal title
    International Journal of Computer Applications
  • Record number

    659386