Title of article
Application of VEE Pro Software for Measurement of MOS Device Parameters using C-V curve
Author/Authors
Viranjay M. Srivastava، نويسنده , , G.Singh، نويسنده , , K.S.Yadav، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
4
From page
43
To page
46
Abstract
For a capacitor formed of MOS device using Metal-silicon dioxide-silicon (MOS) layers with an oxide thickness of 528 A (measured optically), some of the material parameters were found from the curve drawn between Capacitance vs Voltage (C-V) through the Visual Engineering Environment Programming (VEE Pro) software. To perform the measurment, process by a distance, from the hazardous room, we use VEE Pro software. In this research, to find good result, vary the voltage with smaller increments and perform the measurements by vary the applying voltage from +7V to -7V and then back to +7V again and then save this result in a Data sheet with respect to temperature, volage and frequency using this program.
Keywords
VLSI , Capacitance-voltage curves , LCR meter , VEE Pro , MOS device
Journal title
International Journal of Computer Applications
Serial Year
2010
Journal title
International Journal of Computer Applications
Record number
659386
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