• Title of article

    Improved RF modeling techniques for enhanced AlGaN/GaN HFETs

  • Author/Authors

    S.، Nuttinck, نويسنده , , E.، Gebara, نويسنده , , J.، Laskar, نويسنده , , J.، Shealy, نويسنده , , M.، Harris, نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2003
  • Pages
    -13
  • From page
    14
  • To page
    0
  • Abstract
    Modeling procedures of an AlGaN/GaN HFET that incorporate the effects of both a GaN cap layer and an AlN sub-buffer layer are presented. A single off-state measurement method to extract all eight parasitic elements of an enhanced HFET has been successfully applied. In addition, procedures to model the nonlinear drain-tosource current characteristics featuring a kink are described.
  • Keywords
    air pollution , ozone , Carbon dioxide , Bottom-up , atmospheric change , Greenhouse gas , predator-prey , pheromone , Top-down
  • Journal title
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
  • Serial Year
    2003
  • Journal title
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
  • Record number

    66160

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=66160