ELECTROPHYSICAL PROPERTIES OF SCHOTTKY DIODES MADE ON THE BASIS OF SILICON WITH AMORPHOUS AND POLYCRYSTALLINE METAL ALLOY AT LOW DIRECT VOLTAGE

The summary of this paper is devoted to the obtaining of NixTi100-x-nSi Schottky diodes (DSH) and studying its electrophysical properties (where ?=4, 19, 37, 74 and 96). The Schottky diodes made on the basis of amorphous and polycrystalline metal alloys at low direct pressure. It is declared that the Ni35Ti65 alloy has amorphous structure. The height of a potential barrier is found by two methods of I-V and I-T. The obtained results show that the barrier height is rather sensitive to structure of a metal alloy, in comparison with a polycrystalline film of metal. It is shown that an amorphous film of metal to silicon the border of separation is rather homogeneous.