DESIGN AND OPTIMIZATION OF A P+N+IN+ TUNNEL FET

Tunnel FETs are interesting devices for their steep sub-threshold slopes. In this paper a p+n+in+ tunnel FET is proposed and optimized for a high Ion/Ioff ratio and suitable output characteristics. The proposed tunnel FET has p+in+ structure with a ?-doped n+ region at the beginning of the channel. The proposed structure is extensively studied and the energy bands, transfer characteristics, and output characteristics are investigated. In this study, the width and the doping level of n+ ?-doped region are optimized aiming at increasing the Ion/Ioff ratio and improving the output characteristics. Moreover, the channel doping is varied in order to improve on/off characteristics. Simulations show that the proposed transistor exhibits Ion/Ioff ratio as high as 109. Also, linear and saturation regions in the output characteristics are evident, much like a MOSFET.