Author/Authors :
Moghri Moazzen، M. A نويسنده Young Researchers Club, Karaj Branch, Islamic Azad University, Karaj, Iran , , Kadkhodaei ، S نويسنده Department of Physics, Karaj Branch, Islamic Azad University, Karaj, Iran , , Hajakbari، F نويسنده Department of Physics, Karaj Branch, Islamic Azad University, Karaj, Iran , , Hojabri، A نويسنده Department of Physics, Karaj Branch, Islamic Azad University, Karaj, Iran ,
Abstract :
Copper thin films with nano-scale structure have numerous
applications in modern technology. In this work, Cu thin films with
different thicknesses from 50–220 nm have been deposited on glass
substrate by DC magnetron sputtering technique at room temperature
in pure Ar gas. The sputtering time was considered in 4, 8, 12 and 16
min, respectively. The thickness effect on the structural,
morphological and electrical properties were studied by X-ray
diffraction (XRD), atomic force microscope (AFM) and four point
probe (FPP) measurements, respectively. The results show that by
increasing thickness, the copper films crystallinity in (111) direction
increases. Also by varying the films thickness the significant changes
were observed in the films surface morphology due to the
mechanism of films growth. Finally, the relationship between film
resistivity and Cu film thickness are investigated in this paper.
