Author/Authors :
Sayah، C. نويسنده Unité de Recherche Matériaux et Energies Renouvelables, Faculté des sciences de lingénieur, Université Abou-Bekr Belkaïd de Tlemcen.BP 230, Tlemcen 1 , , Bouazza، B. نويسنده Unité de Recherche Matériaux et Energies Renouvelables, Faculté des sciences de lingénieur, Université Abou-Bekr Belkaïd de Tlemcen.BP 230, Tlemcen 1 , , Guen-Bouazza، A. نويسنده Unité de Recherche Matériaux et Energies Renouvelables, Faculté des sciences de lingénieur, Université Abou-Bekr Belkaïd de Tlemcen.BP 230, Tlemcen 1 , , Chabane-Sari، N. C. نويسنده Unité de Recherche Matériaux et Energies Renouvelables, Faculté des sciences de lingénieur, Université Abou-Bekr Belkaïd de Tlemcen.BP 230, Tlemcen 1 ,
Abstract :
We performed a two-dimensional Ensemble Monte Carlo simulation of a GaN metal-semiconductor field effect transistor (MESFET).Scattering processes taken into account are polar optical phonon scattering, acoustic phonon scattering, piezoelectric scattering, intervalley phonon scattering, non-polar optical phonon scattering and the ionized impurity scattering. The carrier transport phenomenon in the submicron sized device is illustrated by the distribution of over 100.000 particles in two dimensional device structure. Channel electrons can reach velocities that largely exceed the saturation velocity (velocity overshoot). Such effect (enhanced by reduction of gate length)) guarantees very fast transit times in submicron structures. The electric field is determined self-consistently from the Poisson equation. Numerical results are presented for a GaN-MESFET.
