Title of article :
Diamond growth on aluminium substrate by HFCVD using different etching gasses
Author/Authors :
Khalaj، Z نويسنده , , Taheri، S.Z نويسنده , , Nasiri Laheghi، S نويسنده , , Alizadeh Eslami، P نويسنده ,
Issue Information :
فصلنامه با شماره پیاپی 0 سال 2009
Pages :
4
From page :
19
To page :
22
Abstract :
Diamond nano crystals and nano crystalline diamond films have been synthesized on an Aluminium substrate by Hot Filament Chemical Vapor Deposition (HFCVD) system in a CH4/H2 gas mixture. This study focuses on the effect of etching gasses, N2, NH3, and, H2 on diamond growth on Al substrate. The optimal conditions were found to be: gas flow rate = 330 sccm, substrate temperature Ts = 500 ° C, and reaction pressure = 30 Torr. Good quality dia- mond nano crystals with (111) crystallite were grown on the Al substrate by H2 as the etching gas. In terms of mor- phology, the analyses were carried out by Scanning Electron Microscopy (SEM). The crystallinity of the Diamond nano crystal films and nano crystalline diamonds were analyzed by X-Ray Diffraction (XRD) analysis.
Journal title :
Journal of Theoretical and Applied Physics
Serial Year :
2009
Journal title :
Journal of Theoretical and Applied Physics
Record number :
690384
Link To Document :
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