• Title of article

    High pressure study of CeIn3: electronic structure and EFG calculations

  • Author/Authors

    Ilkhani، M نويسنده , , Abolhassani، M.R نويسنده Tarbiat Modares University, , , Aslaninejad، M نويسنده ,

  • Issue Information
    فصلنامه با شماره پیاپی 0 سال 2009
  • Pages
    8
  • From page
    41
  • To page
    48
  • Abstract
    Electric field gradients (EFG) at In and Ce sites, electronic specific heat and the magnetic moments at Ce site have been calculated for CeIn3.The calculations were performed by increasing pressure gradually from -5 to +22 GPa, within the density functional theory (DFT) and using the augmented plane waves plus local orbital (APW+lo) me- thod . The so-called PBE-GGA+U and WC-GGA+U schemes have been employed. Results show that the calculated EFG’s at the In site grow smoothly by imposing pressure. We have compared the EFG’s at zero pressure with theo- retical and experimental results. It is shown that our simulation results for EFG’s are close to the results of the other study and in good agreement with experimental data at the ambient pressure. We show that with increasing the pres- sure, the electronic density of states at Fermi level decreases and causes an increase in EFG. Results also indicate that by increasing the pressure, both f density of states at Fermi level and the magnetic moment of Ce decrease. An almost linear increase of magnetic moment versus Ce-4f density of states at Fermi level is observed for the certain range of parameters.
  • Journal title
    Journal of Theoretical and Applied Physics
  • Serial Year
    2009
  • Journal title
    Journal of Theoretical and Applied Physics
  • Record number

    690388