A Study of Hall Effect and Nanostructure of Cu3N Thin Films as a Function of Nitrogen Partial Pressure

Copper nitride thin films with 110 nm thickness were deposited by DC magnetron sputtering system on glass substrate at different nitrogen partial pressure in the range of 2×10-4-8×10-3 mbar. The films crystallographic structure and surface physical morphology were analysed by X-ray diffraction (XRD) method and Atomic Force Microscope (AFM), respectively. A four point probe instrument and a Hall effect investigation system were used for resistivity measurement and Hall effect investigation, separately. The results showed Cu3N structure at all samples, while increasing of nitrogen partial pressure caused increasing of grains size (obtained from XRD and AFM), surface roughness, resistivity and Hall coefficient and decreasing of carrier concentration and Hall mobility.