GaAs-Based III-Ny-V1-y active regions based on Short-Period Super-Lattice Structures

We present in this report, based on conventional super-lattice band structure analysis, a theoretical model within the modified envelope function approximation using a propagation matrix algorithm for design and growth of opto- electronic devices based on III-N-V SPSL structures. The basic principle is to replace the GaInNAs random alloy used as the quantum well material with a SPSL. The design proposals given are based on Growth of the individual binary and ternary configurations of 1.3 ?m M(InAs)mN(GaNyAs)n SPSL structures, which should provide better compositional control as well as improved growth compared to their random alloy III-N-V based GaxIn1?xNyAs1?y QW structures. We also show that there is very good agreement between the proposed numerical approach and ex- perimental results.