Ion beam doping of semiconductor nanowires

Semiconductor nanowires are of major importance within the area of nanotechnology, and are usually synthesized using the so-called vapor-liquid-solid mechanism. Controlled doping, a necessary issue in order to realize devices, is an unsolved problem and an extremely difficult task if using such a growth mechanism. We use an alternative route for modifying the electrical, optical and magnetic properties of semiconductor nanowires: ion implantation. Several independent studies on ion beam doping of semiconductor nanowires will be presented.