Title of article :
Study of electrical and structural properties
of boron doped polysilicon films with a low
nitrogen content
Author/Authors :
H. BOURIDAH، نويسنده , , F. MANSOUR، نويسنده , , R. MAHAMDI، نويسنده , , P. TEMPLE-BOYER، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2005
Abstract :
In this work we propose, the study of nitrogen doped Silicon films for an application as a
poly-Si gate material for metal-oxide-semiconductor devices. Nitrogen doped silicon films
have been deposited at amorphous phase by low-pressure chemical vapor deposition
(LPCVD) from disilane Si2H6 and ammonia NH3 at low temperature (480◦C). The films with
varied nitrogen contents have been boron implanted, and annealed at several annealing
conditions. The influence of the annealing conditions, the nitrogen tenor and the boron
dose on the electrical and the structural properties of films are investigated and correlated.
Results show that the conductivity is maximal (σ ∼ 102 ( · cm)−1) for higher annealing
temperature, a nitrogen content less than 2% and a strong boron dose. These results
indicate that under these optimal conditions, although some nitrogen contents is present in
the films, these latter have a conducting behavior. The crystallization of films was found to
depend principally on the nitrogen tenor. A quasi-totally crystallization was observed for a
nitrogen tenor inferior or equal to 2% and for an annealing temperature of 1100◦C during
120 min. This result is in good agreement with the greatest value of the conductivity
obtained under the same conditions. C 2005 Springer Science + Business Media, Inc.
Journal title :
Journal of Materials Science
Journal title :
Journal of Materials Science