Author/Authors :
L. GORIS?، نويسنده , , K. HAENEN، نويسنده , , M. NESL ´A DEK، نويسنده , , P. WAGNER، نويسنده , , D. VANDERZANDE، نويسنده , ,
L. DE SCHEPPER، نويسنده , , J. D’HAEN، نويسنده , , L. LUTSEN، نويسنده , , J. V. MANCA، نويسنده ,
Abstract :
A high sensitive approach is presented to detect in particular the low level absorption
features in pure and blended organic semiconductor films, revealing a.o. defect induced
sub gap absorption and new interactions between the materials. Because sub bandgap
absorption features are typically characterized by very low absorption coefficients, it is not
possible to resolve them using common transmission and reflection measurements.
Therefore the very sensitive and ground state spectroscopic technique of Photothermal
Deflection Spectroscopy (PDS) has been developed, and introduced to characterize thin
films of MDMO-PPV and PCBM, as well as films of MDMO-PPV containing an increasing
amount of PCBM ranging from 5 to 90% weight fraction. The measured spectra of
MDMO-PPV are interpreted in terms of defect induced absorption phenomena. The spectral
position of the observed transitions in PCBM have been determined and verified. The
PDS-study on MDMO-PPV/PCBM blended films revealed for the first time interaction
between the two materials in the ground state. To get more insight in the interaction
mechanism between the constituting materials a systematic Transmission Electron
Microscopy (TEM) study has been carried out to reveal the morphology of the films. The
obtained TEM-results on nanomorphology of the blended films show clear correlations
with the PDS-results. C 2005 Springer Science + Business Media, Inc.