مرکز منطقه ای اطلاع رساني علوم و فناوري - Improvement of the crystallinity of GaN epitaxial films grown on sapphire substrates due to the use of AlN quantum dot buffer layers

Title of article :

Improvement of the crystallinity of GaN epitaxial films grown on sapphire substrates due to the use of AlN quantum dot buffer layers

Author/Authors :

M. D. KIM، نويسنده , , T. W. KIM، نويسنده ,

Issue Information :

دوهفته نامه با شماره پیاپی سال 2005

Pages :

From page :

5533

To page :

5535

Journal title :

Journal of Materials Science

Serial Year :

2005

Journal title :

Journal of Materials Science

Record number :

830328

Link To Document :