Title of article
Improvement of the crystallinity of GaN epitaxial films grown on sapphire substrates due to the use of AlN quantum dot buffer layers
Author/Authors
M. D. KIM، نويسنده , , T. W. KIM، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2005
Pages
3
From page
5533
To page
5535
Journal title
Journal of Materials Science
Serial Year
2005
Journal title
Journal of Materials Science
Record number
830328
Link To Document