Effect of zirconium addition on formation of CoSi2 thin films

CoSi2 thin films were prepared by annealing the amorphous Co-Si thin films. Zr was added into the amorphous thin film in order to investigate its effect on formation of CoSi2 thin film. It was found that Zr increased the crystallization nucleation barrier and accelerated the complete transformation of CoSi to CoSi2. C 2005 Springer Science + Business Media, Inc.