Title of article :
Reproducibility and stability of N–Al codoped p-type ZnO thin films
Author/Authors :
J. G. LU، نويسنده , , L. P. ZHU، نويسنده , , Z. Z. YE?، نويسنده , , F. ZHUGE، نويسنده , , B. H. ZHAO، نويسنده , , D. W. MA، نويسنده , , L. WANG، نويسنده , , J. Y. Huang، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2006
Pages :
4
From page :
467
To page :
470
Abstract :
Reproducible and stable p-type ZnO thin films have been prepared by the N–Al codoping method. Secondary ion mass spectroscopy measurements demonstrate that N and Al are incorporated into ZnO. The resistivity, carrier concentration, and Hall mobility are typically of 50–100 cm, 1×1017–8×1017 cm−3, and 0.1–0.6 cm2/Vs, respectively, for the N–Al codoped p-type ZnO films. Hall measurement, X-ray diffraction, and optical transmission were carried out to investigate the changes of the properties with the storage period. Results show that the p-type characteristics of the N–Al codoped ZnO films are of acceptable reproducibility and stability. In addition, the N–Al codoped p-type ZnO films have good crystallinity and optical quality. The properties are time independent. C 2006 Springer Science + Business Media, Inc.
Journal title :
Journal of Materials Science
Serial Year :
2006
Journal title :
Journal of Materials Science
Record number :
830536
Link To Document :
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