• Title of article

    Reproducibility and stability of N–Al codoped p-type ZnO thin films

  • Author/Authors

    J. G. LU، نويسنده , , L. P. ZHU، نويسنده , , Z. Z. YE?، نويسنده , , F. ZHUGE، نويسنده , , B. H. ZHAO، نويسنده , , D. W. MA، نويسنده , , L. WANG، نويسنده , , J. Y. Huang، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2006
  • Pages
    4
  • From page
    467
  • To page
    470
  • Abstract
    Reproducible and stable p-type ZnO thin films have been prepared by the N–Al codoping method. Secondary ion mass spectroscopy measurements demonstrate that N and Al are incorporated into ZnO. The resistivity, carrier concentration, and Hall mobility are typically of 50–100 cm, 1×1017–8×1017 cm−3, and 0.1–0.6 cm2/Vs, respectively, for the N–Al codoped p-type ZnO films. Hall measurement, X-ray diffraction, and optical transmission were carried out to investigate the changes of the properties with the storage period. Results show that the p-type characteristics of the N–Al codoped ZnO films are of acceptable reproducibility and stability. In addition, the N–Al codoped p-type ZnO films have good crystallinity and optical quality. The properties are time independent. C 2006 Springer Science + Business Media, Inc.
  • Journal title
    Journal of Materials Science
  • Serial Year
    2006
  • Journal title
    Journal of Materials Science
  • Record number

    830536