Title of article :
Investigation of the size effect on optical properties of polycrystalline Ge deposition by pulse laser deposition
Author/Authors :
XIYING MA، نويسنده , , WEILIN SHI، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2006
Pages :
4
From page :
1025
To page :
1028
Abstract :
The size effect of optical properties of the polycrystalline Ge/Si films prepared by pulse laser deposition (PLD) is investigated by photoluminescence (PL) and photocurrent (PC) spectra. The size of Ge nanocrystals is precisely controlled by the pulsed deposition time and then observed by the atomic force microscopy (AFM). The average size of Ge nanocrystals is about 2, 5 and 25 nm for 1, 2 and 3 min deposited sample, respectively. The size effect on optical properties of Ge nanocrystals has been analyzed by photoluminescence (PL) and photocurrent (PC) spectra. The PL peaks shift from 0.799 eV for 1 min to 0.762 eV for 3 mins; at the same time, the photocurrent peaks of the films sharply changes from 0.781 eV to 0.749 eV, the shifts of PL and PC are contributed to the quantum size effect of Ge nanocrystals. C 2006 Springer Science + Business Media, Inc.
Journal title :
Journal of Materials Science
Serial Year :
2006
Journal title :
Journal of Materials Science
Record number :
830587
Link To Document :
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