Title of article :
Influence of the annealing temperature on violet
emission of ZnO films obtained by oxidation of Zn
film on quartz glass
Author/Authors :
X. M. FAN، نويسنده , , J. S. LIAN?، نويسنده , , Z. X. Guo، نويسنده , , L. ZHAO، نويسنده , , Q. JIANG، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2006
Abstract :
The photoluminescence (PL) emission properties of ZnO films obtained on quartz glass
substrate by the oxidation of Zn films with the oxygen pressure of 50Pa at temperature of
773 K∼973 K were studied. The strong single violet emission centering on 424 nm (or 2.90 eV)
without any accompanying deep-level emission and UV emission was observed in the PL
spectra of the ZnO films at room temperature. The intensity of violet emission increased with
increasing annealing temperature in the range of 773 K∼873 K and decreased with increasing
annealing temperature in the range of 873 K∼973 K. These violet emission bands are attributed
to the electron transition from interstitial zinc (Zni) level (2.91 eV) to the valence band.
C 2006 Springer Science + Business Media, Inc
Journal title :
Journal of Materials Science
Journal title :
Journal of Materials Science