Author/Authors :
R. N. PANDA، نويسنده , , S. KASKEL?، نويسنده ,
Abstract :
The synthesis of high surface area γ -Mo2N materials using the nitridation of oxide precursors
MoO3, H2MoO5, and H2MoO5·H2O with ammonia at 650◦C is described. H2MoO5 and its
hydrated form were obtained from the reaction of MoO3 and diluted H2O2. The materials were
characterized by means of X-ray powder diffraction, thermal analysis and nitrogen
physisorption. Directly after the preparation, the nitride materials were subjected to different
processing conditions: (1) contact to air, (2) inert gas or (3) treated with 1% O2(g)/N2(g) gas
mixture (Passivation). The synthesis and passivation conditions critically affect the specific
surface area of the final product. By means of XRD a minor quantity of MoO2 was detected in
most of the products. The highest specific surface area of the nitrides was 158.4 m2/g for
γ -Mo2N materials using H2MoO5·H2O as the precursor. The high specific surface area
corresponds to an average particle diameter of 4 nm, assuming a cubic morphology of the
nanocrystals (dp = 6/ρSBET, ρ = 9.5 g/cc). The nitrogen physisorption isotherms of γ -Mo2N are of
type IV, but pore sizes and diameters differ significantly depending on the synthesis conditions
due to different defect structures of the intermediates generated in the course of the topotactic
transformation of the oxides to nitrides. C 2006 Springer Science + Business Media, Inc