Title of article
Interfacial structure in silicon nitride sintered with lanthanide oxide
Author/Authors
C. Dwyer، نويسنده , , A. Ziegler، نويسنده , , N. Shibata، نويسنده , , G. B. Winkelman، نويسنده , , R. L. Satet، نويسنده , , M. J. Hoffmann، نويسنده , , M. K. Cinibulk، نويسنده , , P. F. Becher، نويسنده , , G. S. Painter، نويسنده , , N. D. Browning، نويسنده , , D. J. H. Cockayne، نويسنده , , R. O. Ritchie، نويسنده , , S. J. Pennycook، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2006
Pages
8
From page
4405
To page
4412
Abstract
Three independent research groups present a
comparison of their structural analyses of prismatic interfaces
in silicon nitride densified with the aid of lanthanide oxide
Ln2O3. All three groups obtained scanning transmission
electron microscope images which clearly reveal the
presence of well-defined Ln segregation sites at the
interfaces, and, moreover, reveal that these segregation sites
are element-specific. While some results differ across the
three research groups, the vast majority exhibits good
reproducibility.
Journal title
Journal of Materials Science
Serial Year
2006
Journal title
Journal of Materials Science
Record number
831045
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