Title of article :
Interfacial structure in silicon nitride sintered with lanthanide oxide
Author/Authors :
C. Dwyer، نويسنده , , A. Ziegler، نويسنده , , N. Shibata، نويسنده , , G. B. Winkelman، نويسنده , , R. L. Satet، نويسنده , , M. J. Hoffmann، نويسنده , , M. K. Cinibulk، نويسنده , , P. F. Becher، نويسنده , , G. S. Painter، نويسنده , , N. D. Browning، نويسنده , , D. J. H. Cockayne، نويسنده , , R. O. Ritchie، نويسنده , , S. J. Pennycook، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2006
Pages :
8
From page :
4405
To page :
4412
Abstract :
Three independent research groups present a comparison of their structural analyses of prismatic interfaces in silicon nitride densified with the aid of lanthanide oxide Ln2O3. All three groups obtained scanning transmission electron microscope images which clearly reveal the presence of well-defined Ln segregation sites at the interfaces, and, moreover, reveal that these segregation sites are element-specific. While some results differ across the three research groups, the vast majority exhibits good reproducibility.
Journal title :
Journal of Materials Science
Serial Year :
2006
Journal title :
Journal of Materials Science
Record number :
831045
Link To Document :
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