• Title of article

    Interfacial structure in silicon nitride sintered with lanthanide oxide

  • Author/Authors

    C. Dwyer، نويسنده , , A. Ziegler، نويسنده , , N. Shibata، نويسنده , , G. B. Winkelman، نويسنده , , R. L. Satet، نويسنده , , M. J. Hoffmann، نويسنده , , M. K. Cinibulk، نويسنده , , P. F. Becher، نويسنده , , G. S. Painter، نويسنده , , N. D. Browning، نويسنده , , D. J. H. Cockayne، نويسنده , , R. O. Ritchie، نويسنده , , S. J. Pennycook، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2006
  • Pages
    8
  • From page
    4405
  • To page
    4412
  • Abstract
    Three independent research groups present a comparison of their structural analyses of prismatic interfaces in silicon nitride densified with the aid of lanthanide oxide Ln2O3. All three groups obtained scanning transmission electron microscope images which clearly reveal the presence of well-defined Ln segregation sites at the interfaces, and, moreover, reveal that these segregation sites are element-specific. While some results differ across the three research groups, the vast majority exhibits good reproducibility.
  • Journal title
    Journal of Materials Science
  • Serial Year
    2006
  • Journal title
    Journal of Materials Science
  • Record number

    831045