Title of article
From Ti–Al- to Ti–Al–N-sputtered 2D materials
Author/Authors
Maria Teresa Vieira، نويسنده , , Ana S. Ramos، نويسنده , , Jose´ M. Castanho، نويسنده , , Joa?o C. Oliveira، نويسنده , , Albano Cavaleiro، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2007
Pages
9
From page
9145
To page
9153
Abstract
This paper reviews thin films constituted by
elements based on the Ti–Al–N system, bearing in mind
the role of the condensed phases in the development of
structural components and functional devices. In recent
decades, the Ti–Al, Ti–N and Al–N nanocrystalline binary
systems have rapidly attracted research and industry
interest. These systems have revealed a great performance
via atomic-level structural control, making it possible to
tailor new atomic structures and morphologies suitable in
different applications as protective and hard coatings and
as thermal/diffusion barriers. The binary phases based on
nitrogen were the first to exhibit a wealth of interesting
mechanical and electrochemical behaviours. However,
more recently the Ti-Al and, particularly, the Ti1 – xAlxN
thin films have been applied with success in the industry.
The purpose of this paper is to compile the master results
concerning the production and characterisation of binary
and ternary thin films of the Ti–Al–N system using similar
deposition strategies. These materials form a good base to
analyse the correlation between the chemical composition
and the atomic structure, the preferred orientations and the
morphology of 2D monolithic materials. The deposition
strategies adopted and the thin films’ chemical compositions
determine the as-deposited structures and, consequently,
the mechanical behaviour of the thin films
produced, particularly the hardness. In general, an intermediary
amorphous stage is observed, i.e., the thin films
exhibit a loss of crystallinity in the transition from a
saturated solid solution to a new compound.
Journal title
Journal of Materials Science
Serial Year
2007
Journal title
Journal of Materials Science
Record number
833660
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