Author/Authors :
M.H.M.، Reddy, نويسنده , , semiconductor، Buell, D.A.T0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting نويسنده , , J.E.، Hastie, نويسنده , , S.، Calvez, نويسنده , , Jeon، Chan Wook نويسنده , , D.، Burns, نويسنده , , R.، Abram, نويسنده , , E.، Riis, نويسنده , , A.I.، Ferguson, نويسنده , , M.D.، Dawson, نويسنده , , J.-M.، Hopkins, نويسنده ,
Abstract :
We report the power scaling of a diode-pumped GaAs-based 850-nm vertical external-cavity surface-emitting laser, by use of an intracavity silicon carbide (SiC) heatspreader optically contacted to the semiconductor surface. To our knowledge, this is the first demonstration of bonding of SiC to a III-V semiconductor structure using the technique of liquid capillarity. High output power of >0.5 W in a circularly symmetric, TEM/sub 00/ output beam has been achieved with a spectral shift of only 0.6 nm/W of pump power. No thermal rollover was evident up to the highest pump power available, implying significant further output-power scaling potential using this approach.
Keywords :
Aluminium , Friction stir welding , Flaws , Fatigue , Eurocode 9
