• Title of article

    Numerical approach of a free boundary in the junction field effect transistor – MESFET Original Research Article

  • Author/Authors

    J Abouchabaka، نويسنده , , A. Aboulaich، نويسنده , , A Souissi، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1998
  • Pages
    9
  • From page
    531
  • To page
    539
  • Abstract
    This paper presents the numerical approach of the free boundary by using shape optimization method. The numerical simulation field effect transistor MESFET is possible with the Laplace–Poisson model, which introduces two regions, respectively, known by “charge neutrality region” and “depletion region”, separated by some free boundary.
  • Keywords
    Semiconductor problem , Shape optimization method , Free-boundary problem
  • Journal title
    Mathematics and Computers in Simulation
  • Serial Year
    1998
  • Journal title
    Mathematics and Computers in Simulation
  • Record number

    853451

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=853451