Title of article
Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations Original Research Article
Author/Authors
T. Ezaki، نويسنده , , D. Navarro، نويسنده , , Y. Takeda، نويسنده , , N. Sadachika، نويسنده , , G. Suzuki، نويسنده , , M. Miura-Mattausch، نويسنده , , H.J. Mattausch، نويسنده , , T. Ohguro، نويسنده , , T. Iizuka، نويسنده , , M. Taguchi، نويسنده , , S. Kumashiro، نويسنده , , S. Miyamoto، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
11
From page
1096
To page
1106
Abstract
We develop a non-quasi-static MOSFET compact model suitable for simulating RF circuits operating under GHz frequency. The model takes into account the carrier dynamics by incorporating the time delay for the carriers to form a channel. Both the time-domain and frequency-domain expressions are successfully derived from the same basic equation by using the propo
Keywords
Non-quasi-static effect , Surface-potential , Frequency domain , MOSFET compact model , Time domain
Journal title
Mathematics and Computers in Simulation
Serial Year
2008
Journal title
Mathematics and Computers in Simulation
Record number
854613
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