Internal optical loss measurements in InGaAs-InAlGaAs quantum-well lasers operating around 1550 nm

A multisection device technique is employed to carry out internal optical loss measurements in two types of InGaAs-InAlGaAs quantum-well structures. One structure consists of conventional identical-width quantum wells and the other, a broader spectral-width material, consists of multiple-width quantum wells in the active region. The temperature dependence of the internal optical losses is also investigated for both structures.