Author/Authors :
M.H.M.، Reddy, نويسنده , , D.A.، Buell, نويسنده , , D.، Feezell, نويسنده , , T.، Asano, نويسنده , , R.، Koda, نويسنده , , A.S.، Huntington, نويسنده , , L.A.، Coldren, نويسنده , , E.، Hall, نويسنده , , S.، Nakagawa, نويسنده ,
Abstract :
We report, for the first time, InP-based all-epitaxially grown 1.3-(mu)m vertical-cavity surface-emitting lasers with lattice-matched Sb-based distributed Bragg reflectors and AlInAs etched apertures. The minimum threshold current and voltage under pulsed operation were 3 mA and 2.0 V, respectively. The thermal impedance was as low as 1.2 K/mW without heat sinking. Implementation of the AlInAs etched aperture was quite effective in improving the injection efficiency and reducing the internal loss, resulting in improved differential efficiency.
