Ultrafast optoelectronic sample-and-hold using low-temperature-grown GaAs MSM

We demonstrate 20-GHz input bandwidth of an optoelectronic sample-and-hold circuit using optically triggered metal-semiconductor-metal switches made of low-temperature-grown GaAs. Linearity >4 effective-number-of-bits and an estimated 3-dB bandwidth of up to ~ 63 GHz are observed for the sample-and-hold process, making the device a potential candidate for moderate resolution, high-speed sampling applications.