THigh-power 1320-nm wafer-bonded VCSELs with tunnel junctions

A new long-wavelength vertical-cavity surface-emitting laser structure is described that utilizes AlGaAs-GaAs mirrors bonded to AlInGaAs-InP quantum wells with an intracavity buried tunnel junction. This structure offers complete wavelength flexibility in the 1250-1650 nm fiber communication bands and reduces the high freecarrier losses and bonded junction voltage drops in previous devices. The intracavity contacts electrically bypass the bonded junctions to reduce threshold voltage. Ntype current spreading layers and undoped AlGaAs mirrors minimize optical losses. This has enabled 134 C maximum continuous-wave lasing temperature, 2mW room-temperature continuous-wave single-mode power, and 1-mW single-mode power at 80 C, in various devices in the 1310-1340 nm wavelength range.