Author/Authors :
P.، Kner, نويسنده , , T.، Kageyama, نويسنده , , J.، Boucart, نويسنده , , R.، Pathak, نويسنده , , Zhang، Dongxu نويسنده , , Sun، Decai نويسنده , , Fan، Wenjun نويسنده , , Yuen، Wupen نويسنده ,
Abstract :
In this letter, we report low threshold 1.5-(mu)m vertical-cavity surface-emitting lasers with epitaxial and dielectric distributed Bragg reflector (DBRs). The device consists of a lattice-matched InAlAs-InAlGaAs DBR grown on an InP substrate, an InAlGaAs quantum well active region, a metamorphic GaAs tunnel junction, and a SiO/sub 2/-TiO/sub 2/ dielectric DBR. The current confinement is achieved by oxidizing an AlAs metamorphic layer grown on top of the active region. Small aperture devices show a minimum threshold of 0.8 mA at room temperature in continuous-wave operation.
