A new method for pHEMT noise-parameter determination based on 50-(Omega) noise measurement system

A new method for determining the four noise parameters of pseudomorphic high electron-mobility transistors (pHEMTs) based on a 50-(Omega) noise measurement system without a microwave tuner is presented. The noise parameters are determined based on the noise correlation matrix technique by fitting the measured noise figure of the active device. On-wafer experimental verification up to 26 GHz is presented and a comparison with a tuner-based method is given. The scaling rules for noise parameters have also been determined. Good agreement is obtained between simulated and measured results for 2*20 (mu)m, 2*40 (mu)m, and 2*60 (mu)m gatewidth (number of gate fingers * unit gatewidth) 0.25(mu)m double-heterojunction (delta)-doped pHEMTs.