Temperature- and structural-parameters-dependent characteristics of V-band heterojunction FET MMIC DROs

This paper describes a systematic approach to the design and analysis for dielectric resonator oscillators (DROs). The approach features a temperatureand structural-parameters-dependent dielectric resonator (DR) model and a newly developed temperature-dependent nonlinear FET model. The implementation of these models on a harmonicbalance circuit simulator allows prediction for mechanical tuning characteristics, coupling strength dependencies, and temperature-dependent performance of oscillation frequency, output power, and phase noise of DROs. V-band heterojunction FET monolithic-microwave integrated-circuit DROs utilizing a TE/sub 01(delta)/-mode cylindrical DR were designed and fabricated based on the proposed procedure. Good agreement between the predicted and measured characteristics indicates the validity of our design technique featuring the proposed DR and FET models.