Title of article
Proton tolerance of third-generation, 0.12 (mu)m 185 GHz SiGe HBTs
Author/Authors
Lu، Yuan نويسنده , , Li، Ying-Feng نويسنده , , J.D.، Cressler, نويسنده , , G.، Freeman, نويسنده , , R.A.، Reed, نويسنده , , P.W.، Marshall, نويسنده , , R.، Krithivasan, نويسنده , , C.، Polar, نويسنده , , D.، Ahlgren, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-1810
From page
1811
To page
0
Abstract
We present results on the impact of proton irradiation on the dc and ac characteristics of third-generation, 0.12 (mu)m 185 GHz SiGe HBTs. Comparisons with prior technology generations are used to assess how the structural changes needed to enhance performance between second and third generation technology couple to the observed proton response. The results demonstrate that SiGe HBT technologies can successfully maintain their a Mrad-level total dose hardness, without intentional hardening, even when vertically-scaled in order to achieve unprecedented levels of transistor performance.
Keywords
Cell immobilization , bioreactor , Continuous , Determination , Biodegradable dissolved organic carbon
Journal title
IEEE Transactions on Nuclear Science
Serial Year
2003
Journal title
IEEE Transactions on Nuclear Science
Record number
86270
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