Title of article
Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence
Author/Authors
X.، Hu, نويسنده , , D.M.، Fleetwood, نويسنده , , R.D.، Schrimpf, نويسنده , , B.D.، White, نويسنده , , M.، Bataiev, نويسنده , , L.J.، Brillson, نويسنده , , S.H.، Goss, نويسنده , , A.، Karmarkar, نويسنده , , W.J.، Schaff, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-1933
From page
1934
To page
0
Abstract
We have characterized high-electron mobility transistors and corresponding unprocessed material as a function of 1.8 MeV proton fluence. Electrical data shows degradation of the electrical contacts at low fluences (10/sup 11/-10/sup 14/ p/sup +//cm/sup 2/) and degradation of the channel properties for higher fluences. In conjunction with the electrical data, cathodoluminescence and secondary-ion mass spectrometry results suggest mechanisms for the higher fluence degradation.
Keywords
Biodegradable dissolved organic carbon , bioreactor , Cell immobilization , Determination , Continuous
Journal title
IEEE Transactions on Nuclear Science
Serial Year
2003
Journal title
IEEE Transactions on Nuclear Science
Record number
86290
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