Comparison of CCD damage due to 10- and 60-MeV protons

Dark current and charge transfer inefficiency (CTI) data are presented for three charge-coupled devices (CCD) device types after 9.5- and 60-MeV proton irradiation. Comparison of the damage at the two energies allows a test of the validity of NIEL scaling. The ratio of the damage at 9.5 MeV to that at 60 MeV was found to be 35% higher for the CTI than for the average bulk dark current, for the devices tested. Both the CTI and the dark current showed significant annealing at 150/spl deg/C, and this has implications for the lattice defects involved. Cobalt-60 data are also discussed.