14-MeV neutron and Co/sup 60/ gamma testing of a power MOSFET optocoupler

The effect of radiation from neutron activation of package materials was studied using a power MOSFET optocoupler as the test device. The optocouplers were exposed to 14-MeV neutrons to a fluence of 1 *10^11 n/cm/sup 2/, with the devices switching during exposure. Electrical characterization was performed after each neutron exposure. A separate set of optocouplers was then irradiated using a Co/sup 60/ source. These results combined with gamma ray spectroscopy showed that radiation from neutron activation had a significant effect on the electrical parameters of the optocouplers.