Title of article :
Soft error rate increase for new generations of SRAMs
Author/Authors :
T.، Granlund, نويسنده , , B.، Granbom, نويسنده , , N.، Olsson, نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Abstract :
We report on enhanced susceptibility for neutron-induced soft errors from accelerated testing of static random access memories (SRAMs), performed at Los Alamos National Laboratory. This enhancement is per bit of memory.
Keywords :
bioreactor , Determination , Biodegradable dissolved organic carbon , Continuous , Cell immobilization
Journal title :
IEEE Transactions on Nuclear Science
Journal title :
IEEE Transactions on Nuclear Science
