Title of article
Single-event upset in evolving commercial silicon-on-insulator microprocessor technologies
Author/Authors
A.H.، Johnston, نويسنده , , G.M.، Swift, نويسنده , , F.، Irom, نويسنده , , F.H.، Farmanesh, نويسنده , , G.L.، Yoder, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-2106
From page
2107
To page
0
Abstract
Single-event upset effects from heavy ions are measured for Motorola and IBM silicon-on-insulator (SOI) microprocessors with different feature sizes and core voltages. Multiple-bit upsets in registers and D-cache were measured and compared with single-bit upsets. Also, the scaling of the cross section with reduction of feature size for SOI microprocessors is discussed.
Keywords
Continuous , Biodegradable dissolved organic carbon , Cell immobilization , bioreactor , Determination
Journal title
IEEE Transactions on Nuclear Science
Serial Year
2003
Journal title
IEEE Transactions on Nuclear Science
Record number
86315
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