Title of article
Heavy-ion broad-beam and microprobe studies of single-event upsets in 0.20-(mu)m SiGe heterojunction bipolar transistors and circuits
Author/Authors
B.، Gilbert, نويسنده , , T.، Irwin, نويسنده , , J.D.، Cressler, نويسنده , , P.E.، Dodd, نويسنده , , R.A.، Reed, نويسنده , , J.C.، Pickel, نويسنده , , P.W.، Marshall, نويسنده , , K.A.، LaBel, نويسنده , , R.، Krithivasan, نويسنده , , B.، Fodness, نويسنده , , G.، Niu, نويسنده , , M.A.، Carts, نويسنده , , K.، Fritz, نويسنده , , G.، Vizkelethy, نويسنده , , P.، Riggs, نويسنده , , J.، Prairie, نويسنده , , B.، Randall, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-2183
From page
2184
To page
0
Abstract
Combining broad-beam circuit level single-event upset (SEU) response with heavy ion microprobe charge collection measurements on single silicon-germanium heterojunction bipolar transistors improves understanding of the charge collection mechanisms responsible for SEU response of digital SiGe HBT technology. This new understanding of the SEU mechanisms shows that the right rectangular parallel-piped model for the sensitive volume is not applicable to this technology. A new first-order physical model is proposed and calibrated with moderate success.
Keywords
Determination , Continuous , Biodegradable dissolved organic carbon , Cell immobilization , bioreactor
Journal title
IEEE Transactions on Nuclear Science
Serial Year
2003
Journal title
IEEE Transactions on Nuclear Science
Record number
86325
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