Microstructures on Ge detectors with amorphous Ge contacts

A new method for segmenting germanium detectors with amorphous Ge contacts (aGe contacts) is presented. The method is based on the established technique for performing position sensitive structures by means of photolithography and subsequent plasma etching of grooves through implanted contacts. A first prototype was manufactured from n-type germanium. The p/sup +/-contact was fabricated by boron implantation. The a-Ge contact was realized through an evaporated germanium layer covered with an evaporated aluminum layer. A simple 50 strip structure with a pitch of 615 (mu)m was produced on the a-Ge contact. The grooves between the strips were 13-(mu)m deep and 56-(mu)m wide. The coincidental spectra of adjacent strips indicate that practically no charge losses were caused by the existence of the groove between them. According to the first results, good functioning structures on the a-Ge contacts can be created by means of plasma etched grooves. Narrow grooves, even below 10 (mu)m, can be fabricated. Energy measurements with practically no energy losses influenced by the grooves can be performed.