Nonequilibrium first-order phase transition in semiconductor system driven by colored noise

We examine the mechanisms of action of colored multiplicative noise in a positionally disordered semiconductor with Moss–Burstein shift. It is shown that the action of multiplicative noise causes nonequilibrium first-order phase transition of the disorder–order-type in electron subsystem of semiconductor. There are relatively little changes in a condensed matter at such phase transitions, but the electron subsystem undergoes a strong reorganization. The steady photocarriers concentration distribution is studied within a unified colored-noise approximation.