Title of article
The Influence of Lateral Carrier Diffusion and Surface Recombination on the Behavior of Semiconductor Optical Amplifier (SOA)-Based MMIs
Author/Authors
Baets، Roel نويسنده , , Merlier، Jan De نويسنده , , Morthier، Geert نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-87
From page
88
To page
0
Abstract
The influence of lateral carrier diffusion and surface recombination on the self-imaging properties of semiconductoroptical-amplifier-based multimode interference couplers has been verified by simulations using a beam propagation method. It shows a significant degradation of the self-imaging properties of these devices. Buried heterostructures or deeply etched waveguide structures can decrease the impact when the degree of surface recombination is sufficiently low.
Keywords
surface recombination , semiconductor optical amplifier , multimode interference coupler(MMI) , diffusion
Journal title
IEEE JOURNAL OF QUANTUM ELECTRONICS
Serial Year
2003
Journal title
IEEE JOURNAL OF QUANTUM ELECTRONICS
Record number
87215
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