Author/Authors :
C.S.، Chang, نويسنده , , S.J.، Chang, نويسنده , , Y.K.، Su, نويسنده , , Y.C.، Lin, نويسنده , , R.W.، Chuang, نويسنده , , S.C.، Shei, نويسنده , , H.M.، Lo, نويسنده , , H.Y.، Lin, نويسنده , , J.C.، Ke, نويسنده ,
Abstract :
Nitride-based blue light emitting diodes (LEDs) with an n/sup +/-short period superlattice (SPS) tunnel contact layer and an indium tin oxide (ITO) transparent contact were fabricated. Compared with conventional nitridebased LEDs with Ni/Au upper contacts, it was found that we could achieve a 60% increase in electroluminescence (EL) intensity by using ITO upper contacts. However, it was also found that the lifetime of ITO LEDs were much shorter. Furthermore, it was found that we could achieve a longer lifetime and a smaller reverse leakage current (I/sub R/) by the deposition of a SiO/sub 2/ layer on top of the ITO LEDs.
Keywords :
multiple-wavelength emission , nonlinear optics , quantum cascade laser , mid-infrared , Intersubband transitions , Quantum wells , Second-harmonic generation
