High-power highly reliable 1.02-1.06-(mu)m InGaAs strained-quantum-well laser diodes

By growing the InGaAs active layer at temperatures lower than in conventional growth, we extended the lasing wavelength and presented the high reliability in InGaAs strained-quantum-well laser diodes. Equivalent I-L characteristics were obtained for 1.02-, 1.05-, and 1.06-(mu)m laser diodes with a cavity length of 1200 (mu)m. Maximum output power as high as 800 mW and fundamental transverse mode operation at up to 400 mW were obtained at 1.06 (mu)m and an 1800-(mu)m cavity. Stable operation was observed for over 14 000 h under autopower-control of 225 mW at 50(degree)C for the 1.02-, 1.05-, and 1.06-(mu)m lasers with a 900-(mu)m cavity.