An optimization study on the anisotropic TMAH wet etching of silicon (100)

A response surface methodology application was used to determine the optimum conditions for anisotropic TMAH wet etching of silicon (100). Local anodic oxidation process using atomic force microscopy lithography was used to transfer silicon oxide pattern as a mask on the silicon substrates. The effects of simultaneous changes in the two independent variables on the etching depth were investigated. The interaction of these factors on the etching depth was analyzed by the parameter of the interaction effect. The experimental results obtained were ?tted to a quadratic equation model using multiple regression analysis of the response variables. Etching time and temperature were found to signi?cantly contribute to the etching rate. The observed etching rates at various conditions were exactly consistent with theoretical studies.