Title of article
High field approximations to a Boltzmann-Poisson system and boundary conditions in a semiconductor Original Research Article
Author/Authors
C. Cercignani، نويسنده , , I.M. Gamba، نويسنده , , C.D. Levermore، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
7
From page
111
To page
117
Abstract
We consider the Boltzmann-Poisson system for electrons in a semiconductor in the case of high fields and small devices. We discuss closures of moment equations and boundary conditions for both the distribution function and the moments.
Keywords
Boltzmann-Poisson system , Semiconductors , Boundary conditions , High electric fields , Fluid models
Journal title
Applied Mathematics Letters
Serial Year
1997
Journal title
Applied Mathematics Letters
Record number
896545
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