Title of article :
The relaxation limits to the bipolar hydrodynamic model for semiconductors
Original Research Article
Author/Authors :
Ling Hsiao، نويسنده , , N.J. Mauser، نويسنده , , Kai-Jun Mang، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Abstract :
Zero relaxation limit results of weak solutions of the initial-boundary value problem to the bipolar hydrodynamic model with the general pressure-density relation for semiconductors are established by the method of high energy estimates.
Keywords :
Bipolar hydrodynamic model , Semiconductors , Zero relaxation limits
Journal title :
Applied Mathematics Letters
Journal title :
Applied Mathematics Letters