New technology for the control of narrow-gap semiconductors

We present the results of the year work in the frame of the EU ESPRIT Project 28890 NTCONGS “New technology for the control of narrow-gap semiconductors”. This work has involved both theoretical and experimental study, as well as the development of new specific equipment, towards the creation of a new generation of nanoelectronic devices able to operate at 77 K and even at room temperature.