Stability of a micromechanical pull-in voltage reference

The reproducibility over temperature and time of the pull-in voltage of micromechanical structures has been analyzed and verified using fabricated devices in silicon. The pull-in structures are intended for use as an on-chip voltage reference. Microbeams of 100-(mu)m length, 3-(mu)m width, and 11-(mu)m thickness are electrostatically actuated with a very reproducible pull-in voltage at 9.1 V. Devices demonstrated an initial drift of 12 mV over 10 days and stabilized within the 500-(mu)V measurement uncertainty. The measured temperature coefficient of -1 mV/K is in good agreement with the analysis and is due to the combined effect of thermal expansion and the temperature dependence of the Youngʹs modulus in silicon.