Author/Authors :
M.، Tayahi, نويسنده , , G.T.، Dang, نويسنده , , R.، Mehandru, نويسنده , , B.، Luo, نويسنده , , F.، Ren, نويسنده , , W.S.، Hobson, نويسنده , , J.، Lopata, نويسنده , , S.N.G.، Chu, نويسنده , , S.J.، Pearton, نويسنده , , W.، Chang, نويسنده , , H.، Shen, نويسنده ,
Abstract :
Process technology of high-speed implant-apertured index-guide lateral-current-injection top dielectric-mirror quantum-well 850-nm vertical cavity surface-emitting lasers (VCSELs) has been developed. Oxygen and helium implantation for aperture definition and extrinsic capacitance reduction, dielectric mirror formation, p- and nohmic contact formation, VCSEL resistance, and thermal analysis were investigated. Employing this technology, GaAs/AlGaAs-based 850-nm VCSELs with small signal modulation bandwidths up to 11.5 Gb/s and an eye diagram generated at 12 Gb/s by a pseudorandom bit sequence of 2/sup 31/-1 were achieved. The bit-error rates were below 10^-13. The threshold current is as low as 0.8 mA for 7-(mu)m-diameter current apertures and typical slope efficiencies of 0.45-0.5 mA/mW were obtained.
Keywords :
Metal ions , inhibition , activation , Salts
