Title of article :
Quasi-neutral Limit of a Nonlinear Drift Diffusion
Model for Semiconductors
Author/Authors :
Ingenuin Gasser1، نويسنده , , Ling Hsiao2 3، نويسنده , , Peter A. Markowich1 2، نويسنده , , Shu Wang2 and Jucheng Deng، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2002
Abstract :
The limit of the vanishing Debye length (the charge neutral limit) in a nonlinear
bipolar drift-diffusion model for semiconductors without a pn-junction
(i.e., with a unipolar background charge) is studied. The quasi-neutral limit(zero-Debye-length limit) is determined rigorously by using the so-called entropy
functional which yields appropriate uniform estimates
Keywords :
Quasi-neutral limit , nonlinear drift-diffusion equations , entropymethod.
Journal title :
Journal of Mathematical Analysis and Applications
Journal title :
Journal of Mathematical Analysis and Applications