Title of article :
Quasi-neutral Limit of a Nonlinear Drift Diffusion Model for Semiconductors
Author/Authors :
Ingenuin Gasser1، نويسنده , , Ling Hsiao2 3، نويسنده , , Peter A. Markowich1 2، نويسنده , , Shu Wang2 and Jucheng Deng، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2002
Pages :
16
From page :
184
To page :
199
Abstract :
The limit of the vanishing Debye length (the charge neutral limit) in a nonlinear bipolar drift-diffusion model for semiconductors without a pn-junction (i.e., with a unipolar background charge) is studied. The quasi-neutral limit(zero-Debye-length limit) is determined rigorously by using the so-called entropy functional which yields appropriate uniform estimates
Keywords :
Quasi-neutral limit , nonlinear drift-diffusion equations , entropymethod.
Journal title :
Journal of Mathematical Analysis and Applications
Serial Year :
2002
Journal title :
Journal of Mathematical Analysis and Applications
Record number :
933547
Link To Document :
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